HIGH VOLTAGE POWER MOSFET HAVING A VOLTAGE SUSTAINING REGION THAT INCLUDES DOPED COLUMNS FORMED BY TRENCH ETCHING USING AN ETCHANT GAS THAT IS ALSO A DOPING SOURCE

Details for Australian Patent Application No. 2002367408 (hide)

Event Publications

4 September 2003 Application Open to Public Inspection

Published as AU-A-2002367408

4 September 2003 Complete Application Filed

Priority application(s): 10/039,284 31.12.01 US

23 September 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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