VERTICAL MOSFETS HAVING CROSSING TRENCH-BASED GATE ELECTRODES THAT EXTEND INTO DEEPER TRENCH-BASED SOURCE ELECTRODES AND METHODS OF FORMING SAME

Details for Australian Patent Application No. 2002363937 (hide)

Owner SILICON WIRELESS CORPORATION

Inventors BALIGA, Bantual, Jayant

Pub. Number AU-A-2002363937

PCT Number PCT/US02/37187

PCT Pub. Number WO2003/046996

Priority 09/995,019 26.11.01 US

Filing date 19 November 2002

Wipo publication date 10 June 2003

International Classifications

H01L 029/417 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

H01L 029/423 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

Event Publications

17 July 2003 Complete Application Filed

  Priority application(s): 09/995,019 26.11.01 US

21 August 2003 Application Open to Public Inspection

  Published as AU-A-2002363937

12 August 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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