SOI MOSFET JUNCTION DEGRADATION USING MULTIPLE BURIED AMORPHOUS LAYERS

Details for Australian Patent Application No. 2002360680 (hide)

Owner ADVANCED MICRO DEVICES, INC.

Inventors WEI, Andy; SULTAN, Akif; WU, David

Pub. Number AU-A-2002360680

PCT Number PCT/US02/40745

PCT Pub. Number WO2003/075357

Priority 10/085,903 28.02.02 US

Filing date 18 December 2002

Wipo publication date 16 September 2003

International Classifications

H01L 029/786 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

H01L 021/265 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Event Publications

3 April 2003 Complete Application Filed

  Priority application(s): 10/085,903 28.02.02 US

23 October 2003 Application Open to Public Inspection

  Published as AU-A-2002360680

18 November 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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