LOW TEMPERATURE EPITAXIAL GROWTH OF QUATERNARY WIDE BANDGAP SEMICONDUCTORS

Details for Australian Patent Application No. 2002360281 (hide)

Owner ARIZONA BOARD OF REGENTS, a body corporate acting on behalf of Arizona State University

Inventors TSONG, Ignatius, S. T.; KOUVETAKIS, John; ROUCKA, Radek; TOLLE, John

Pub. Number AU-A-2002360281

PCT Number PCT/US02/33134

PCT Pub. Number WO2003/033781

Priority 09/981,024 16.10.01 US; 60/380,998 16.05.02 US

Filing date 16 October 2002

Wipo publication date 28 April 2003

International Classifications

C30B 025/00 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth

Event Publications

3 April 2003 Complete Application Filed

  Priority application(s): 09/981,024 16.10.01 US; 60/380,998 16.05.02 US

3 July 2003 Application Open to Public Inspection

  Published as AU-A-2002360281

1 July 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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