METHOD FOR DEPOSITING III-V SEMICONDUCTOR LAYERS ON A NON III-V SUBSTRATE

Details for Australian Patent Application No. 2002358678 (hide)

Owner AIXTRON AG

Inventors JURGENSEN, Holger; KROST, Alois; DADGAR, Armin

Pub. Number AU-A-2002358678

PCT Number PCT/EP02/14096

PCT Pub. Number WO2003/054939

Priority 102 06 751.1 19.02.02 DE; 101 63 715.2 21.12.01 DE

Filing date 11 December 2002

Wipo publication date 9 July 2003

International Classifications

H01L 021/203 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

C30B 025/04 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth - Pattern deposit, e.g. by using masks

C30B 025/08 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth - Reaction chambers

Event Publications

3 April 2003 Complete Application Filed

  Priority application(s): 102 06 751.1 19.02.02 DE; 101 63 715.2 21.12.01 DE

2 October 2003 Application Open to Public Inspection

  Published as AU-A-2002358678

9 September 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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