Method for producing silicon

Details for Australian Patent Application No. 2002354349 (hide)

Owner Tokuyama Corporation

Inventors Oda, Hiroyuki; Wakamatsu, Satoru

Agent Phillips Ormonde Fitzpatrick

Pub. Number AU-B-2002354349

PCT Number PCT/JP02/10848

PCT Pub. Number WO2003/040036

Priority 2002-87451 27.03.02 JP; 2001-322571 19.10.01 JP

Filing date 18 October 2002

Wipo publication date 19 May 2003

Acceptance publication date 5 April 2007

International Classifications

C01B 33/03 (2006.01) Silicon

C01B 33/107 (2006.01) Silicon

C30B 15/00 (2006.01) Single-crystal growth by pulling from a melt, e.g. Czochralski method

C30B 25/02 (2006.01) Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth - Epitaxial-layer growth

Event Publications

20 March 2003 Complete Application Filed

  Priority application(s): 2002-87451 27.03.02 JP; 2001-322571 19.10.01 JP

8 July 2004 Application Open to Public Inspection

  Published as AU-B-2002354349

5 April 2007 Application Accepted

  Published as AU-B-2002354349

2 August 2007 Standard Patent Sealed

17 May 2012 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This patent ceased under section 143(a), or Expired. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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