NITRIDING METHOD FOR INSULATION FILM, SEMICONDUCTOR DEVICE AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE, SUBSTRATE TREATING DEVICE AND SUBSTRATE TREATING METHOD

Details for Australian Patent Application No. 2002354103 (hide)

Owner TOKYO ELECTRON LIMITED

Inventors IGETA, Masanobu; AOYAMA, Shintaro; SHINRIKI, Hiroshi; TAKAHASHI, Tsuyoshi

Pub. Number AU-A-2002354103

PCT Number PCT/JP02/12788

PCT Pub. Number WO2003/049173

Priority 2002-118477 19.04.02 JP; 2001-374631 07.12.01 JP; 2001-374632 07.12.01 JP; 2001-374633 07.12.01 JP; 2001-401210 28.12.01 JP

Filing date 5 December 2002

Wipo publication date 17 June 2003

International Classifications

H01L 021/318 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 021/316 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 029/78 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

H01L 021/31 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Event Publications

20 March 2003 Complete Application Filed

  Priority application(s): 2002-118477 19.04.02 JP; 2001-374631 07.12.01 JP; 2001-374632 07.12.01 JP; 2001-374633 07.12.01 JP; 2001-401210 28.12.01 JP

21 August 2003 Application Open to Public Inspection

  Published as AU-A-2002354103

26 August 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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