IMPROVING THE TRIGGERING OF AN ESD NMOS THROUGH THE USE OF AN N-TYPE BURIED LAYER

Details for Australian Patent Application No. 2002343551 (hide)

International Classifications

Event Publications

27 February 2003 Complete Application Filed

Priority application(s): 60/335,912 02.11.01 US

15 January 2004 Application Open to Public Inspection

Published as AU-A-2002343551

22 July 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

15 October 2009 Corrigenda

Applications OPI - Corrigenda Name Index Under the name Fairchild Semiconductor Corporation, Application No. 2002343551, under INID (43) correct the Publication Date to read 24.11.2003

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