METHOD FOR GROWING LOWDEFECT SINGLE CRYSTAL HETEROEPITAXIAL FILMS

Details for Australian Patent Application No. 2002339906 (hide)

Owner THE GOVERNMENT OF THE UNITED STATES OF AMERICA, as represented by THE ADMINISTRATOR OF THE NATIONAL

Inventors NEUDECK, Philip, G.; POWELL, J., Anthony

Pub. Number AU-A-2002339906

PCT Number PCT/US02/28686

PCT Pub. Number WO2003/027363

Priority 09/965,250 25.09.01 US

Filing date 9 September 2002

Wipo publication date 7 April 2003

International Classifications

C30B 025/18 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth - characterised by the substrate

C30B 029/36 Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

H01L 021/36 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

C30B 025/02 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth - Epitaxial-layer growth

Event Publications

27 February 2003 Complete Application Filed

  Priority application(s): 09/965,250 25.09.01 US

17 June 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

24 June 2004 Application Open to Public Inspection

  Published as AU-A-2002339906

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