DELTA DOPED SILICON CARBIDE METAL-SEMICONDUCTOR FIELD EFFECT TRANSISTORS AND METHODS OF FABRICATING OF FABRICATING THEM

Details for Australian Patent Application No. 2002334921 (hide)

International Classifications

Event Publications

13 February 2003 Complete Application Filed

Priority application(s): 10/136,456 24.10.01 US

3 July 2003 Application Open to Public Inspection

Published as AU-A-2002334921

8 July 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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