METHOD OF DEPOSITING HIGHQUALITY SIGE ON SIGE SUBSTRATES

Details for Australian Patent Application No. 2002333138 (hide)

Owner SIGE SEMICONDUCTOR INC.

Inventors DION, Michel, Maurice.; LAFONTAINE, Hugues

Pub. Number AU-A-2002333138

PCT Number PCT/CA02/01608

PCT Pub. Number WO2003/036698

Priority 60/330,662 26.10.01 US

Filing date 25 October 2002

Wipo publication date 6 May 2003

International Classifications

H01L 021/20 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

C30B 025/02 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth - Epitaxial-layer growth

Event Publications

13 February 2003 Complete Application Filed

  Priority application(s): 60/330,662 26.10.01 US

3 July 2003 Application Open to Public Inspection

  Published as AU-A-2002333138

15 July 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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