METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING COMPOSITE BUFFER LAYER

Details for Australian Patent Application No. 2002330437 (hide)

Owner TONGJI UNIVERSITY

Inventors CHEN, Xingbi

Pub. Number AU-A-2002330437

PCT Number PCT/CN02/00675

PCT Pub. Number WO2003/028076

Priority 01141993.8 27.09.01 CN

Filing date 24 September 2002

Wipo publication date 7 April 2003

International Classifications

H01L 021/302 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 029/06 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

C30B 025/02 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth - Epitaxial-layer growth

Event Publications

30 January 2003 Complete Application Filed

  Priority application(s): 01141993.8 27.09.01 CN

26 June 2003 Application Open to Public Inspection

  Published as AU-A-2002330437

17 June 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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