INTEGRATED CIRCUIT DEVICE AND FABRICATION USING METAL-DOPED CHALCOGENIDE MATERIALS

Details for Australian Patent Application No. 2002329914 (hide)

Owner MICRON TECHNOLOGY, INC.

Inventors LI, Jiutao; MCTEER, Allen

Pub. Number AU-A-2002329914

PCT Number PCT/US02/27526

PCT Pub. Number WO2003/020998

Priority 09/943,426 30.08.01 US

Filing date 30 August 2002

Wipo publication date 18 March 2003

International Classifications

C23C 014/18 Coating by vacuum evaporation, by sputtering or by ion implantation - on other inorganic substrates

H01L 027/24 Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate - including solid state components for rectifying, amplifying, or switching without a potential-jump barrier or surface barrier

C23C 014/34 Coating by vacuum evaporation, by sputtering or by ion implantation - Sputtering

Event Publications

30 January 2003 Complete Application Filed

  Priority application(s): 09/943,426 30.08.01 US

5 June 2003 Application Open to Public Inspection

  Published as AU-A-2002329914

10 June 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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