BORON-DOPED TITANIUM NITRIDE LAYER FOR HIGH ASPECT RATIO SEMICONDUCTOR DEVICES
Details for Australian Patent Application No. 2002329660 (hide)
International Classifications
Event Publications
30 January 2003 Complete Application Filed
Priority application(s): 09/918,919 31.07.01 US
29 May 2003 Application Open to Public Inspection
Published as AU-A-2002329660
6 May 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired
This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.
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