METHOD FOR FORMING A CAVITY STRUCTURE ON SOI SUBSTRATE AND CAVITY STRUCTURE FORMED ON SOI SUBSTRATE

Details for Australian Patent Application No. 2002329292 (hide)

Owner VALTION TEKNILLINEN TUTKIMUSKESKUS

Inventors KIIHAMAKI, Jyrki

Pub. Number AU-A-2002329292

PCT Number PCT/FI02/00772

PCT Pub. Number WO2003/030234

Priority 20011922 01.10.01 FI

Filing date 27 September 2002

Wipo publication date 14 April 2003

International Classifications

H01L 021/306 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 027/12 Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate - the substrate being other than a semiconductor body, e.g. an insulating body

B81C 003/00 Assembling of devices or systems from individually processed components

Event Publications

30 January 2003 Complete Application Filed

  Priority application(s): 20011922 01.10.01 FI

26 June 2003 Application Open to Public Inspection

  Published as AU-A-2002329292

17 June 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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