NITRIDE SEMICONDUCTOR ELEMENT AND PRODUCTION METHOD FOR NITRIDE SEMICONDUCTOR ELEMENT

Details for Australian Patent Application No. 2002328641 (hide)

Owner SONY CORPORATION

Inventors BIWA, Goshi; OKUYAMA, Hiroyuki; DOI, Masato; OOHATA, Toyoharu

Pub. Number AU-A-2002328641

PCT Number PCT/JP02/08431

PCT Pub. Number WO2003/019678

Priority 2002-10529 18.01.02 JP; 2001-252101 22.08.01 JP

Filing date 21 August 2002

Wipo publication date 10 March 2003

International Classifications

H01L 033/00 Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission

Event Publications

23 January 2003 Complete Application Filed

  Priority application(s): 2002-10529 18.01.02 JP; 2001-252101 22.08.01 JP

5 June 2003 Application Open to Public Inspection

  Published as AU-A-2002328641

6 May 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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2002328642-Title not given

2002328640-STAMPER FOR MANUFACTURING OPTICAL RECORDING MEDIUM, METHOD FOR FORMING INFORMATION RECORDING AREA AND LIGHT TRANSMITTING LAYER, AND OPTICAL RECORDING MEDIUM