METHOD FOR ACHIEVING DEVICEQUALITY, LATTICEMISMATCHED, HETEROEPITAXIAL ACTIVE LAYERS

Details for Australian Patent Application No. 2002324889 (hide)

Owner MIDWEST RESEARCH INSTITUTE

Inventors WANLASS, Mark, W.; AHRENKIEL, S., Phillip

Pub. Number AU-A-2002324889

PCT Number PCT/US02/28314

PCT Pub. Number WO2004/022820

Filing date 5 September 2002

Wipo publication date 29 March 2004

International Classifications

C30B 025/02 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth - Epitaxial-layer growth

C30B 025/04 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth - Pattern deposit, e.g. by using masks

Event Publications

16 January 2003 Complete Application Filed

13 May 2004 Application Open to Public Inspection

  Published as AU-A-2002324889

19 May 2005 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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