METHOD FOR CUTTING SAPPHIRE SUBSTRATE FOR SEMICONDUCTOR DEVICE

Details for Australian Patent Application No. 2002318840 (hide)

Owner TOYODA GOSEI CO., LTD.

Inventors ONISHI, Masaru; HASHIMURA, Masaki; SATO, Takao

Pub. Number AU-A-2002318840

PCT Number PCT/JP02/07139

PCT Pub. Number WO2003/025990

Priority 2001-274525 11.09.01 JP

Filing date 12 July 2002

Wipo publication date 1 April 2003

International Classifications

H01L 021/301 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 033/00 Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission

H01S 005/02 Semiconductor lasers

Event Publications

9 January 2003 Complete Application Filed

  Priority application(s): 2001-274525 11.09.01 JP

5 June 2003 Application Open to Public Inspection

  Published as AU-A-2002318840

17 June 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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