HIGH SURFACE QUALITY GAN WAFER AND METHOD OF FABRICATING SAME

Details for Australian Patent Application No. 2002312266 (hide)

Owner ADVANCED TECHNOLOGY MATERIALS, INC.

Inventors XU, Xueping; VAUDO, Robert, P.

Pub. Number AU-A-2002312266

PCT Number PCT/US02/17449

PCT Pub. Number WO2002/101121

Priority 09/877,437 08.06.01 US

Filing date 4 June 2002

Wipo publication date 23 December 2002

International Classifications

C30B 025/02 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth - Epitaxial-layer growth

C30B 025/04 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth - Pattern deposit, e.g. by using masks

Event Publications

2 January 2003 Complete Application Filed

  Priority application(s): 09/877,437 08.06.01 US

15 May 2003 Application Open to Public Inspection

  Published as AU-A-2002312266

11 March 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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