TRENCH MOSFET HAVING IMPLANTED DRAIN-DRIFT REGION AND PROCESS FOR MANUFACTURING OF THE SAME

Details for Australian Patent Application No. 2002310514 (hide)

Owner SILICONIX, INC.

Inventors DARWISH, Mohamed, N.

Pub. Number AU-A-2002310514

PCT Number PCT/US02/20301

PCT Pub. Number WO2003/005452

Priority 09/898,652 03.07.01 US

Filing date 21 June 2002

Wipo publication date 21 January 2003

International Classifications

H01L 029/78 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

H01L 029/08 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

H01L 021/336 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Event Publications

19 December 2002 Complete Application Filed

  Priority application(s): 09/898,652 03.07.01 US

22 May 2003 Application Open to Public Inspection

  Published as AU-A-2002310514

18 March 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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