HIGH VOLTAGE N-CHANNEL LDMOS DEVICES BUILT IN A DEEP SUBMICRON CMOS PROCESS

Details for Australian Patent Application No. 2002309858 (hide)

Owner VIRTUAL SILICON TECHNOLOGY, INC.

Inventors SPADEA, Gregorio

Pub. Number AU-A-2002309858

PCT Number PCT/US02/15456

PCT Pub. Number WO2002/095833

Priority 60/291,457 15.05.01 US

Filing date 14 May 2002

Wipo publication date 3 December 2002

International Classifications

H01L 029/76 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

H01L 029/94 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

H01L 023/58 Details of semiconductor or other solid state devices - Structural electrical arrangements for semiconductor devices not otherwise provided for

H01L 021/332 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 021/76 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Event Publications

19 December 2002 Complete Application Filed

  Priority application(s): 60/291,457 15.05.01 US

8 May 2003 Application Open to Public Inspection

  Published as AU-A-2002309858

4 March 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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