GROUP-III NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH BARRIER/SPACER LAYER
Details for Australian Patent Application No. 2002307296 (hide)
International Classifications
Event Publications
19 December 2002 Complete Application Filed
Priority application(s): 10/102,272 19.03.02 US; 60/290,195 11.05.01 US
1 May 2003 Application Open to Public Inspection
Published as AU-A-2002307296
4 March 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired
This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.
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