MOSFETS WITH STRAINED SEMICONDUCTOR LAYERS

Details for Australian Patent Application No. 2002306181 (hide)

Owner MASSACHUSETTS INSTITUTE OF TECHNOLOGY

Inventors LEITZ, Christopher, W.; LEE, Minjoo, L.; FITZGERALD, Eugene, A.

Pub. Number AU-A-2002306181

PCT Number PCT/US02/19607

PCT Pub. Number WO2003/001607

Priority 60/299,986 21.06.01 US; 60/310,346 06.08.01 US

Filing date 21 June 2002

Wipo publication date 8 January 2003

International Classifications

H01L 029/80 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

H01L 027/092 Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

Event Publications

19 December 2002 Complete Application Filed

  Priority application(s): 60/299,986 21.06.01 US; 60/310,346 06.08.01 US

19 June 2003 Application Open to Public Inspection

  Published as AU-A-2002306181

11 March 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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