III GROUP NITRIDE BASED SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURE THEREOF

Details for Australian Patent Application No. 2002304154 (hide)

Owner TOYODA GOSEI CO., LTD.

Inventors ITO, Jun; CHIYO, Toshiaki; SENDA, Masanobu; SHIBATA, Naoki

Pub. Number AU-A-2002304154

PCT Number PCT/JP02/05429

PCT Pub. Number WO2002/101840

Priority 2001-170910 06.06.01 JP

Filing date 3 June 2002

Wipo publication date 23 December 2002

International Classifications

H01L 033/00 Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission

H01L 031/02 Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation - Details

H01L 029/205 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

C23C 004/00 Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge

Event Publications

12 December 2002 Complete Application Filed

  Priority application(s): 2001-170910 06.06.01 JP

15 May 2003 Application Open to Public Inspection

  Published as AU-A-2002304154

11 March 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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