SEMICONDUCTOR STRUCTURES UTILIZING BINARY METAL OXIDE LAYERS

Details for Australian Patent Application No. 2002253996 (hide)

Owner MOTOROLA, INC.

Inventors DROOPAD, Ravindranath; OOMS, William, J.; YU, Zhiyi

Pub. Number AU-A-2002253996

PCT Pub. Number WO2002/089188

Priority 09/842,734 26.04.01 US

Filing date 21 February 2002

Wipo publication date 11 November 2002

International Classifications

H01L 021/00 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

C30B 025/18 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth - characterised by the substrate

C30B 029/16 Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

C30B 029/22 Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

Event Publications

17 April 2003 Application Open to Public Inspection

  Published as AU-A-2002253996

19 February 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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