SOI MOSFET WITH HYPERABRUPT SOURCE AND DRAIN JUNCTIONS

Details for Australian Patent Application No. 2002251857 (hide)

Owner ADVANCED MICRO DEVICES, INC.

Inventors KRISHNAN, Srinath; MASZARA, Witold, P.

Pub. Number AU-A-2002251857

PCT Pub. Number WO2002/101811

Priority 09/878,614 11.06.01 US

Filing date 31 January 2002

Wipo publication date 23 December 2002

International Classifications

H01L 021/336 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 021/265 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 027/12 Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate - the substrate being other than a semiconductor body, e.g. an insulating body

Event Publications

15 May 2003 Application Open to Public Inspection

  Published as AU-A-2002251857

11 March 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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