SOURCE REAGENT COMPOSITION FOR CVD FORMATION OF Zr/Hf DOPED GATE DIELECTRIC AND HIGH DIELECTRIC CONSTANT METAL OXIDE THIN FILMS AND METHOD OF USING SAME

Details for Australian Patent Application No. 2002250122 (hide)

Event Publications

6 March 2003 Application Open to Public Inspection

Published as AU-A-2002250122

12 February 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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