DUAL TRENCH ISOLATION FOR A PHASE-CHANGE MEMORY CELL AND METHOD OF MAKING SAME

Details for Australian Patent Application No. 2002248493 (hide)

Owner INTEL CORPORATION OVONYX, INC.

Inventors XU, Daniel

Pub. Number AU-A-2002248493

PCT Pub. Number WO2003/073511

Filing date 22 February 2002

Wipo publication date 9 September 2003

International Classifications

H01L 027/102 Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate - including bipolar components

H01L 045/00 Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes

G11C 011/34 Digital stores characterised by the use of particular electric or magnetic storage elements - using semiconductor devices

H01L 027/24 Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate - including solid state components for rectifying, amplifying, or switching without a potential-jump barrier or surface barrier

H01L 021/762 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Event Publications

16 October 2003 Application Open to Public Inspection

  Published as AU-A-2002248493

23 October 2003 Application Open to Public Inspection

  Published as AU-A-2002248493

11 November 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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