METHODS FOR GROWTH OF RELATIVELY LARGE STEP-FREE SIC CRYSTAL SURFACES

Details for Australian Patent Application No. 2002245268 (hide)

Owner THE GOVERNMENT OF THE UNITED STATES OF AMERICA, as represented by THE ADMINISTRATOR OF THE NATIONAL

Inventors NEUDECK, Philip, G.; POWELL, J., Anthony

Pub. Number AU-A-2002245268

PCT Pub. Number WO2002/063075

Priority 09/776,998 07.02.01 US

Filing date 17 January 2002

Wipo publication date 19 August 2002

International Classifications

C30B 025/02 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth - Epitaxial-layer growth

C30B 025/18 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth - characterised by the substrate

C30B 029/36 Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

Event Publications

13 February 2003 Application Open to Public Inspection

  Published as AU-A-2002245268

12 February 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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