A DEVICE FOR EPITAXIALLY GROWING OBJECTS BY CVD

Details for Australian Patent Application No. 2002244997 (hide)

Owner ABB RESEARCH LIMITED

Inventors LIU, Yuijing; LOFGREN, Peter; HALLIN, Christer; ZHOU, Gang

Pub. Number AU-A-2002244997

PCT Pub. Number WO2002/078070

Priority 0101012-3 23.03.01 SE

Filing date 22 March 2002

Wipo publication date 8 October 2002

International Classifications

H01L 021/205 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

C30B 025/10 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth - Heating of the reaction chamber or the substrate

C30B 025/12 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth - Substrate holders or susceptors

Event Publications

27 March 2003 Application Open to Public Inspection

  Published as AU-A-2002244997

19 February 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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