METHOD FOR GROWING CRYSTAL OF GALLIUM NITRIDE COMPOUND SEMICONDUCTOR AND ELECTRONIC DEVICE HAVING GALLIUM NITRIDE COMPOUND SEMICONDUCTOR

Details for Australian Patent Application No. 2002238993 (hide)

Owner SOMEYA, Takao HOSHINO, Katsuyuki ARAKAWA, Yasuhiko

Inventors ARAKAWA, Yasuhiko; HOSHINO, Katsuyuki; SOMEYA, Takao

Pub. Number AU-A-2002238993

PCT Pub. Number WO2002/078067

Priority 2001-84297 23.03.01 JP

Filing date 20 March 2002

Wipo publication date 8 October 2002

International Classifications

H01L 021/205 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 029/812 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

C23C 016/34 Chemical deposition or plating by decomposition - Nitrides

C30B 029/38 Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

H01L 021/338 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 029/201 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

Event Publications

27 March 2003 Application Open to Public Inspection

  Published as AU-A-2002238993

19 February 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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