PRODUCTION METHOD FOR SEMICONDUCTOR CRYSTAL AND SEMICONDUCTOR LUMINOUS ELEMENT

Details for Australian Patent Application No. 2002230223 (hide)

Owner TOYODA GOSEI CO., LTD.

Inventors NAGAI, Seiji; TOMITA, Kazuyoshi; YAMAZAKI, Shiro; TEZEN, Yuta; HIRAMATSU, Toshio

Pub. Number AU-A-2002230223

PCT Pub. Number WO2002/064864

Priority 2001-036604 14.02.01 JP; 2001-98870 30.03.01 JP; 2001-274376 11.09.01 JP

Filing date 12 February 2002

Wipo publication date 28 August 2002

International Classifications

C30B 025/18 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth - characterised by the substrate

Event Publications

20 February 2003 Application Open to Public Inspection

  Published as AU-A-2002230223

12 February 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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