COMPOUND SEMICONDUCTOR ELEMENT BASED ON GROUP III ELEMENT NITRIDE

Details for Australian Patent Application No. 2002225393 (hide)

Owner TOYODA GOSEI CO., LTD.

Inventors CHIYO, Toshiaki; ITO, Jun; SHIBATA, Naoki

Pub. Number AU-A-2002225393

PCT Pub. Number WO2002/056393

Priority 2001-7038 15.01.01 JP

Filing date 10 January 2002

Wipo publication date 24 July 2002

International Classifications

H01L 033/00 Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission

H01L 021/203 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 021/205 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

C30B 029/40 Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

Event Publications

6 February 2003 Application Open to Public Inspection

  Published as AU-A-2002225393

5 February 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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