SUSCEPTORLESS REACTOR FOR GROWING EPITAXIAL LAYERS ON WAFERS BY CHEMICAL VAPOR DEPOSITION

Details for Australian Patent Application No. 2001285127 (hide)

Owner EMCORE CORPORATION

Inventors BOGUSLAVSKIY, Vadim; GURARY, Alexander

Pub. Number AU-A-2001285127

PCT Pub. Number WO2002/063074

Priority 09/778,265 07.02.01 US

Filing date 21 August 2001

Wipo publication date 19 August 2002

International Classifications

C30B 025/02 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth - Epitaxial-layer growth

C30B 025/14 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth - Feed and outlet means for the gases

C30B 025/08 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth - Reaction chambers

C30B 025/12 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth - Substrate holders or susceptors

Event Publications

13 February 2003 Application Open to Public Inspection

  Published as AU-A-2001285127

12 February 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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