Semiconductor device and method of its manufacture

Details for Australian Patent Application No. 2001277779 (hide)

Owner Nakata, J.

Inventors Nakata, Josuke

Agent Spruson & Ferguson

Pub. Number AU-B-2001277779

PCT Pub. Number WO2003/017383

Filing date 13 August 2001

Wipo publication date 3 March 2003

Acceptance publication date 7 April 2005

International Classifications

H01L 031/072 Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation

H01L 031/103 Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation

H01L 033/00 Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission

H01L 029/06 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

Event Publications

29 May 2003 Application Open to Public Inspection

  Published as AU-B-2001277779

7 April 2005 Application Accepted

  Published as AU-B-2001277779

4 August 2005 Standard Patent Sealed

24 May 2012 Assignment Registered

  Nakata, Josuke The patent has been assigned to Kyosemi Corporation

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